| 摘要 |
The single wafer type low pressure chemical vapor deposition device comprises a deposition base(10) provided with a wafer going/incoming hole(11) formed on one side thereof and also provided with a discharging hole(12) for exhausting air and reactible product, the discharging hole(12) formed on another side thereof; a double-deposition path(20) having a structure of an interior quartz tube(21) and an exterior quartz tube(22), the interior quartz tube(21) being installed on the deposition base(10), providing a deposition reacting space(S) and opened in upper and lower parts thereof, an exterior quartz tube(22) having a formation of a compound source gas supplying path(23) between the interior quartz tube(21) and the exterior quartz tube(22); a compound source gas injecter(30) whose part is combined with the deposition base(10), the compound source gas injecter(30) being also connected through the inside of the compound source gas supplying path(23); a wafer(40) elevating in the inside of the deposition reacting space(S) of the deposition path(20); a wafer heating part(50) combined with the wafer(40); and a deposition path heating part(60) installed on the exterior of the exterior quartz tube(22), thereby effectuating in a mass production and in an automation of a factory.
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