| 摘要 |
<p>A method of fabricating a semiconductor device includes steps of forming a first insulating film(12,13), a conductive film(14), a second insulating film(15) and a selected film(16) in sequence on a substrate(11). Next, a first resist pattern(21) is formed in a first region on the selected film(16) by means of photo-lithography. The selected film(16) is patterned by using the first resist pattern(21), after which the first resist pattern(21) is removed. Next, a second resist pattern(41) is formed in a second region on the surface of at least the second insulating film(15) by means of electron beam lithography. The second insulating film(15) is patterned by using the second resist pattern(41), after which the second resist pattern(41) is removed. The conductive film(14) is then patterned by using the patterned second insulating film(15) as a mask. The selected film(16) is provided with an etching characteristic substantially the same as that of the conductive film(14) so that remaining portions thereof are removed during the conductive film(14) patterning step. <IMAGE> <IMAGE> <IMAGE></p> |
