| 摘要 |
PROBLEM TO BE SOLVED: To prevent the silicon single crystal produced by a CZ method from having dislocations and to improve the pressure resistant characteristic of its oxidized film. SOLUTION: Conductive thermal resistance members 9, 9 which have a specific resistance value of <=40007μΩcm and thermal conductivity of <=150kcal/ mhr deg.C are intervened between a heater 3 for heating the raw material in a crucible 2 and leading-in electrodes 8, 8 for power feeding consisting of copper. The single crystal is prevented from having the dislocations by suppressing the heat radiation via the leading-in electrodes 8, 8 and lowering heater electric power. The contamination of the single crystal with Cu by the leading-in electrodes 8, 8 is suppressed and the pressure resistant characteristic of the oxidized film is improved.
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