发明名称 |
Semiconductor memory device and method of fabricating the same |
摘要 |
In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.
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申请公布号 |
US5640367(A) |
申请公布日期 |
1997.06.17 |
申请号 |
US19960609147 |
申请日期 |
1996.02.28 |
申请人 |
MEGA CHIPS CORPORATION |
发明人 |
HIKAWA, TETSUO;TAKATA, AKIRA;SAWADA, TAKASHI |
分类号 |
G11C17/12;G11C11/56;G11C16/02;G11C16/04;G11C16/06;H01L21/8246;H01L21/8247;H01L27/112;H01L27/115;(IPC1-7):G11C8/00 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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