Static random access memory device and manufacturing method thereof

摘要

A static random access memory (SRAM) device and a manufacturing method thereof are provided. In the SRAM memory device, a first active region of annular shape and a second active region bisecting the annulus are repeatedly formed over the whole cell array. Thus, since the contact hole for connecting the power line to the active region can be formed larger without increasing the cell size, contact resistance can be decreased. Also, the manufacturing method can be simplified since just one gate oxide layer formation process is needed.