发明名称 Ball grid assembly type semiconductor device having a heat diffusion function and an electric and magnetic shielding function
摘要 A semiconductor device comprises a circuit substrate being provided with a first lead pattern and a second lead pattern on a front surface and rear surface thereof respectively. The first lead pattern includes a die mounting region and conductive leads. The second lead pattern includes first outer connecting terminal lands connected with the die mounting region by way of first vias, second outer connecting terminal lands connected with the conductive leads of the first lead pattern by way of second vias, and a ground plane connected with the first outer connecting terminal lands while being electrically and magnetically shielded from the second outer connecting terminal lands. Solder balls are mounted on the first and second outer connecting terminal lands respectively. A semiconductor die is fixedly mounted on the die mounting region. Bonding wires connect electrode pads mounted on the semiconductor die with the conductive leads respectively. A resin package seals the semiconductor die and the bonding wires on the front surface of the circuit substrate. The semiconductor device effectively restricts the occurrence of cross talk noises caused by parasitic current on the conductive layer, improves heat diffusion of the semiconductor device and effectively prevents malfunctions of semiconductor devices caused by electromagnetic noises.
申请公布号 US5640047(A) 申请公布日期 1997.06.17
申请号 US19960641351 申请日期 1996.04.30
申请人 MITSUI HIGH-TEC, INC. 发明人 NAKASHIMA, TAKASHI
分类号 H01L23/12;H01L23/367;H01L23/498;H01L23/552;H01L23/58;H05K3/00;H05K3/34;H05K3/40;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/12
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