发明名称 |
Trenched DMOS transistor fabrication having thick termination region oxide |
摘要 |
A trenched DMOS transistor is fabricated using seven masking steps. One masking step defines both the P+ deep body regions and the active portions of the transistor which are masked using a LOCOS process. A second masking step defines the insulating oxide in the termination region. The insulating (oxide) layer in the termination region is thus thicker than in the active region of the transistor, thereby improving process control and reducing substrate contamination during processing. Additionally, the thicker field oxide in the termination region improves electric field distribution so that avalanche breakdown occurs in the cell (active) region rather than in the termination region, and thus breakdown voltage behavior is more stable and predictable.
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申请公布号 |
US5639676(A) |
申请公布日期 |
1997.06.17 |
申请号 |
US19960603047 |
申请日期 |
1996.02.16 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
HSHIEH, FWU-IUAN;CHANG, MIKE F.;HO, YUEH-SE;OWYANG, KING |
分类号 |
H01L21/316;H01L21/336;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L21/265;H01L21/44;H01L21/48 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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