发明名称 |
Infrared sensor having a heat sensitive semiconductor portion that detects and absorbs infrared rays |
摘要 |
An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.
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申请公布号 |
US5640013(A) |
申请公布日期 |
1997.06.17 |
申请号 |
US19950543040 |
申请日期 |
1995.10.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHIKAWA, TOMOHIRO;UENO, MASASHI;KANEDA, OSAMU |
分类号 |
G01J1/02;H01L27/14;H01L27/146;H01L37/02;(IPC1-7):H04N5/33;G01J5/20 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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