发明名称 |
Method of making semiconductor device with metal silicide nitride layer and metal silicide |
摘要 |
A MOSFET in accordance with this invention includes: a metal silicide layer formed on a impurity region and on the upper surface of a gate electrode; a metal silicide nitride layer formed on the metal silicide layer; and a metal nitride layer formed on the metal silicide nitride layer. The process for formation of a conductive layer includes the steps of: (a) forming an impurity region in a semiconductor substrate; (b) forming a metal layer on the impurity region; (c) carrying out a heat treatment under an inert gas atmosphere to form a metal silicide of metastable phase; and (d) carrying out a heat treatment under an nitrogen gas atmosphere so as for the metal silicide of the metastable phase to be phase-transited to a stable phase.
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申请公布号 |
US5639678(A) |
申请公布日期 |
1997.06.17 |
申请号 |
US19950370715 |
申请日期 |
1995.01.10 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
LEE, CHANG-JAE;KIM, CHANG-REOL |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L23/485;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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