发明名称 Gehäusungssystem, für Feldeffekttransistoren
摘要 In a packaging system 50 for semiconductor components e.g. internally matched field effect transistor ("IMFET") dies 55, individual dies are eutectically bonded to individual FET mounting bars 61. The mounting bar/FET die combination is then eutectically bonded, along with the other components comprising the package, to a package base 51. After a wiring operation, the package is completed by sealing it with a cover (80, Fig. 11 not shown). The system 50 permits the economical correction of micro-voids between the FET dies and the mounting bars.
申请公布号 DE19645971(A1) 申请公布日期 1997.06.12
申请号 DE1996145971 申请日期 1996.11.07
申请人 HEWLETT-PACKARD CO., PALO ALTO, CALIF., US 发明人 LEADER III, CHARLES C., SAN JOSE, CALIF., US;DEARBORN, DAVID D., SAN JOSE, CALIF., US;MITRA, SHANTANU, REDWOOD SHORES, CALIF., US
分类号 H01L25/18;H01L23/66;H01L25/04;H01L25/065 主分类号 H01L25/18
代理机构 代理人
主权项
地址