发明名称 Belichtungsverfahren und -vorrichtung zum Bilden von Mikromustern
摘要 A method and an apparatus used to form a pattern on a wafer uses elliptically or circularly polarised light. The light may be determined by use of equations induced in accordance with the vector image theory and deriving S and P-polarized components (S com and P com ) (these components are perpendicular to and parallel to a meridional plane, respectively) of polarized light having x and y-directional components entering an illumination mask, thereby preventing a contrast difference resulting from a contrast gap generated in the conventional linear polarization method, namely, an inconsistency between the longitudinal direction of the pattern and the polarization direction.
申请公布号 DE19650722(A1) 申请公布日期 1997.06.12
申请号 DE19961050722 申请日期 1996.12.06
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., ICHON, KYOUNGKI, KR 发明人 JEON, SEONG HO, ICHON, KR;LEE, SUNG MUK, ICHON, KR;CHO, BAE DOO, ICHON, KR
分类号 G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F7/20
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