Thin film semiconductor layer reproducible doping method for esp. silicon@ layer

摘要

The method involves providing a silicon substrate (1) upon which is formed an n-doped layer (2) through ion implantation. A protection layer of silicon dioxide is then formed throughout the n-doped layer through temperature treatment. A phase boundary region (4) is subsequently formed between the oxide layer and the n-doped region within which is provided a section in the substrate (5) and a section in the oxide layer (6). The boundary between the two layer types, especially the oxide layer and the semiconductor layer enclosed region of the other layer type, especially the oxide layer, determines the electrical properties of the systems non interfering material and compounds to compensate the induced prominent segregation properties in the boundary layer.