| 摘要 |
<p>The invention relates to the manufacture of a laser which is provided with a metal layer (11) and a solder layer (13) as early as in the wafer (10) stage, and which is particularly suitable for so-called epi-down final mounting. An individual laser is obtained in that first a block (14) comprising a row of lasers is formed from the wafer (10) by cleaving, and subsequently the individual lasers are separated from the block (14). According to the invention, strip-shaped openings (15) are formed in the metal layer (11) at the areas of end faces (50, 51) to be formed before the block (14) is formed, and subsequently a score (16) is provided in the surface of the semiconductor body (10) in each opening (15) in the longitudinal direction thereof, whereupon the solder layer (13) is provided over the metal layer (11) and over at least part of the openings (15) therein, and the block (14) is subsequently formed through cleaving at the areas of and in the direction of the scores (16). Lasers may thus be obtained in a simple manner which have excellent soldering properties, also adjacent the end faces (50, 51), and which can be soldered epi-down on a suppport body (30) without the risk of short-circuits arising. The solder layer (13) preferably comprises AuSn and is allowed to be comparatively thick, for example 4 νm, while covering the openings (15) fully. Preferably, a similar procedure is followed in the direction perpendicular to the end faces (50, 51). Openings (18) are also formed in the solder layer (13) in any case, preferably through the placement of a wire mask (20) before the solder layer (13) is provided.</p> |
