发明名称 Dynamic random access memory
摘要 <p>An inexpensive single-chip integrated DRAM memory system having a high density and large bandwidth is provided comprising a DRAM array 10 having a plurality of pipelined stages 12, a control logic circuit 11 for controlling said DRAM array 10, and buffer means 13 integrated onto said chip for storing data being fetched from said DRAM array. The DRAM array and said control logic and said buffer means are all integrated onto one and the same substrate 1, wherein said control logic 11 generates a control signal for controlling operations taking place in said plurality of pipelined stages and the final stage of said pipeline 12 inputs/outputs data from said buffer means 13 in a burst mode. &lt;IMAGE&gt;</p>
申请公布号 EP0778575(A2) 申请公布日期 1997.06.11
申请号 EP19960308132 申请日期 1996.11.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KATAYAMA, YASUNAO
分类号 G11C11/401;G11C7/00;G11C7/10;(IPC1-7):G11C7/00;G11C11/409 主分类号 G11C11/401
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