| 摘要 |
<p>Disclosed is a technique for forming integrated capacitors using a sequence of process steps that is fully compatible with standard silicon gate MOS integrated circuit processing. The capacitor comprises a polysilicon-oxide-TiN/metal combination.</p><p>The lower plate, i.e. polysilicon plate, is interconnected at the gate level and the upper plate is interconnected typically at metal one.</p> |
