| 摘要 |
PURPOSE:To obtain a resist having superior dry etching resistance, high sensitivity and resolution fit for practical use and to form a fine pattern by using a specified copolymer as a resist material for exposure. CONSTITUTION:A copolymer represented by formula I is used as a positive resist material for exposure with radiation. This resist material is applied to a substrate and irradiated with high energy radiation to form a mask and the substrate is dry-etched through the mask to form a pattern. In the formula I, X is phenyl or a deriv. thereof and Y is an electron withdrawing group. The copolymer represented by the formula I contains arom. rings having superior dry etching resistance in the structure and the principal chain is liable to break because the acrylonitrile skeleton has the electron withdrawing group substd. at the alpha-position. Accordingly, a resist having superior dry etching resistance, high sensitivity and resolution fit for practical use are obtd. and a fine pattern is formed by using the resist. |
