发明名称 |
Structure and fabrication method for thin film capacitors |
摘要 |
<p>A capacitor is fabricated on a base surface (16) by applying a first pattern of electrical conductors (20) (a first capacitor plate) over the base surface with an outer surface of the first pattern of electrical conductors including molybdenum. A first hard portion of a capacitor dielectric layer (22) including amorphous hydrogenated carbon is deposited over the first capacitor plate and the base surface, a soft portion of the capacitor dielectric layer is deposited over the first hard portion, and a second hard portion of the capacitor dielectric layer is deposited over the soft portion. The deposition of the soft portion occurs at a lower bias voltage than the deposition of the first and second hard portions. A second pattern of electrical conductors (24) (a second capacitor plate) is applied over the capacitor dielectric layer which is then patterned. A polymer layer (28) is applied over the first and second capacitor plates, and two vias (30) are formed, a first via extending to the first capacitor plate (20) and a second via extending to the second capacitor plate (24). An electrode-coupling pattern of electrical conductors (32) is applied over the polymer layer (28), a first portion extending into the first via and a second portion extending into the second via. Deposition of the capacitor dielectric layer can include using a methylethylketone precursor. Additional capacitor dielectric layers and plates having staggered via landing pads can be layered to increase the capacitance. <IMAGE></p> |
申请公布号 |
EP0778619(A2) |
申请公布日期 |
1997.06.11 |
申请号 |
EP19960308766 |
申请日期 |
1996.12.04 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
SAIA, RICHARD JOSEPH;DUROCHER, KEVIN MATTHEW;GOROWITZ, BERNARD |
分类号 |
H01G4/33;H01L27/01;H01L23/498;H01L23/538;(IPC1-7):H01L27/01 |
主分类号 |
H01G4/33 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|