| 摘要 |
<p>PURPOSE:To obtain scanning lines having a flattened structure by filling the circumferences of the scanning lines with a metal which is low in resistance and is made into an insulator by an anodic oxidation. CONSTITUTION:Al is deposited on one main surface of an insulating substrate 2 to form an Al layer 30 and photosensitive resin patterns 31 corresponding to the patterns of the scanning lines are selectively formed on the Al layer 30. The parts right under the photosensitive resin patterns 32 constitute the scanning lines 11 when the Al layer 30 is selectively insulated to form an Al2O3 layer 32 with the photosensitive resin patterns 31 as a mask by the anodic oxidation in a vessel contg. a chemical conversion liquid in succession to the above formation. The photosensitive resin patterns 31 are thereafter removed and three layers of SiNx-a.Si-SiNx are deposited, by which insulated gate type transistors are completed.</p> |
