| 摘要 |
<p>There is provided a method of fabricating a semiconductor device having a base region and an emitter region both of which are formed in self-aligned fashion with a base opening at which a base region is to be formed, comprising, at least, the steps of (a) forming a collector region (6) in a semiconductor substrate (14) prior to depositing an insulating film (4) over the semiconductor substrate (14), and (b) forming a region at which a collector electrode (10b) is to be formed simultaneously with a region at which an emitter electrode (10a) is to be formed. The method makes it possible decrease the number of photolithography steps by two relative to a conventional method. <IMAGE></p> |
