发明名称 |
Method for the determination of nitrogen concentration in compound semiconductor |
摘要 |
An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference DELTA alpha (= alpha N - alpha ) in the absorption coefficient of light of a wavelength identical with the wavelength lambda N due to the excitons under constraint in the isoelectronic trap between the semiconductors with ( alpha N) and without ( alpha ) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of DELTA alpha . |
申请公布号 |
EP0732753(A3) |
申请公布日期 |
1997.06.11 |
申请号 |
EP19960104006 |
申请日期 |
1996.03.14 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
YAMADA, MASATO;YANAGISAWA, MUNEHISA;HIGUCHI, SUSUMU |
分类号 |
G01N21/31;H01L21/66;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
G01N21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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