| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacture processes of a high resistance loading type static random access memory and stabilize a resistance element. SOLUTION: The manufacture of a semiconductor device is composed of; e) a process of forming a poly Si film 110 on the surface of a first insulating layer 108 to an extent that a through hole 109 is not completely filled, g) a process of forming a double-layer structure second conductive film by forming a metal silicide film 311 composed of WSi, Ti, Co, etc., on the surface of the poly Si film 110, and h) a process of processing the second conductive films 110 and 111 into the prescribed patterns. A process (f) which implants ions of P, As, etc., to the surface of the poly Si film 110 may be preferably added between the process of (e) and the process of (g), and prior to the process of (e), a process of oxidizing the surface of the first conductive film 104 which faces the through hole 109 may be added. A process of annealing the poly Si film 110 with hydrogen may also be added between the process of (e) and the process of (g). |
