| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor dynamics sensor which greatly improves chip yield. SOLUTION: An etching-potential apply wire 5 (50, 51) is provided via an insulated film on a chip area 20 which includes an N-type thin area formed by electrochemical stop etching and which is surrounded by a P-type inter-chip separating layer 3. The etching-potential apply wire 5 (50, 51) is provided with a predetermined interval (etching-potential apply wire interval) with respect to a wire 6 (circuit wire) other than the etching-potential apply wires 5 (50, 51). To reduce the number of processes are thereby improve the yield, the wire 6 is provided via an insulating film on the chip area 20, at the same time of providing the etching-potential apply wires 5 (50, 51). The etching-potential apply interval is set to be wider then intervals (circuit wire intervals) among all the circuit wires in the chip. Further, by connecting a test pad 53 to the etching-potential apply wire 50 via a test-pad connection wire 52, the test pad 53 is separated from the etching-potential apply wire 50. This greatly improves the conventional chip yield. |
