Optically addressed spatial light modulator using an intrinsic semiconductor active material and high resistivity cladding layers

摘要

An optically addressed spatial light modulator includes top and bottom conductive layers sandwiching an intrinsic semiconductor multilayer structure. A cladding layer having a high trapping density is sandwiched between at least one of the electrodes and the intrinsic semiconductor layer structure. Typically, one cladding layer will be sandwiched between the top conductive layer and the intrinsic semiconductor multilayer structure and another cladding layer will be sandwiched between the bottom conductive layer and the intrinsic semiconductor structure. The cladding layer or layers laterally confine the photocarriers generated within the intrinsic semiconductor multilayer structure.