| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is decreased in the simultaneously switching noises of an address signal and a data signal. SOLUTION: A first memory bank (101) and a second memory back (102) are alternately accessed in time division. To access the first memory back, the address signal or the data signal is outputted to the first memory bank and simultaneously therewith, an inversion address signal and inversion data signal are outputted to the second memory bank. As a result, the currents flowing to positive and negative power sources are made alternately reverse symmetrical in the two memory banks and, therefore, the simultaneous switching noises are decreased. |
