发明名称 |
Method of vapor phase epitaxial growth |
摘要 |
In a vapor phase epitaxial growth process, formation of a silicon nodule on a back side protective film on a wafer is prevented. In the process, a susceptor situated within a reaction chamber is provided with a depression portion for supporting a wafer at a back side peripheral portion thereof. A protection film on a back side peripheral portion of the wafer, which is to be in contact with the susceptor 4 is removed in advance, prior to epitaxial growth. In addition, it is also effective to apply a silicon coating on the surface of the depression portion, prior to the epitaxial growth process.
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申请公布号 |
US5637145(A) |
申请公布日期 |
1997.06.10 |
申请号 |
US19960586934 |
申请日期 |
1996.01.03 |
申请人 |
TOSHIBA MACHINE CO., LTD. |
发明人 |
MIYANOMAE, YOSHIHIRO;KASHIWAGI, NOBUO |
分类号 |
C23C16/24;C30B25/02;H01L21/20;H01L21/205;(IPC1-7):C30B23/02 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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