发明名称 FORMATION OF RESIST PATTERNS AND APPARATUS THEREFOR
摘要 PROBLEM TO BE SOLVED: To make it possible to produce a large-sized liquid crystal display element substrate with an exposure mask of a small area by using the abrasion phenomenon of excimer lasers. SOLUTION: The resist applied on the substrate constituting the liquid crystal display element is patterned according to the opening patterns of the exposure mask 7 having the area smaller than the area of the thin-film pattern forming regions of the substrate and having prescribed opening patterns 7a, 7b, 7b', 7c, 7c' by abrasion phenomenon by relatively moving the exposure mask 7 within an X-Y plane parallel with these thin-film pattern forming regions and by irradiation of the exposure mask with excimer laser beams 12a, 12b, 12c formed to a slit form in a direction orthogonal with the relative moving direction.
申请公布号 JPH09152567(A) 申请公布日期 1997.06.10
申请号 JP19950312723 申请日期 1995.11.30
申请人 HITACHI LTD 发明人 SUZUKI KENKICHI;MATSUDA MASAAKI;OGINO TOSHIO
分类号 G02F1/13;G02F1/1333;G03F1/00;G03F1/68;G03F7/20 主分类号 G02F1/13
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