| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device having uniform quality and good characteristics by performing a heat treatment for crystallization after at least one metallic element for an intermetallic compound and a specific nonmetallic element are introduced into an amorphous semiconductor film. SOLUTION: An amorphous silicon film 2 is deposited on a substrate 1 of hard glass at low temperature, typically by plasma CVD. A metallic element 4 for an intermetallic compound 7, and a nonmetallic element 3 selected from group VIb or VIIb or N are introduced into the amorphous silicon film 2. Then the silicon film 2 is heat-treated so that it may become crystalline with seed crystals formed of the intermetallic compound 7 of Si and the element 3. In a cooling process after the heat treatment, the nonmetallic element 4 and the seed crystals 7 react to form an electrically inactive compound 8 in the crystalline silicon film 2.
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