发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To uniformly process semiconductor wafers and increase throughput by providing a T-shaped gas supply nozzle that includes a column having small gas spouting holes near a column flange and near a susceptor. SOLUTION: A very large vertical epitaxial growth system comprises a discoid susceptor 2 on which a plurality of wafer holders 2a is arranged in parallel to hold a semiconductor wafer 1. The growth system has a T-shaped nozzle 4 near the center 2c of the surface 2a of the susceptor 2, and the nozzle includes a column 4a for spouting process gas such as monosilane, and a flange 4b for controlling the direction 3a of the process gas 3. The semiconductor wafer 1 is heated through the susceptor by a work coil 5. The nozzle 4 has a plurality of small spouting holes 4f in a tip portion 4c of the column 4a, in a portion near the flange 4d and in a portion 4e near the susceptor.</p>
申请公布号 JPH09153461(A) 申请公布日期 1997.06.10
申请号 JP19950311835 申请日期 1995.11.30
申请人 HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD 发明人 ARAKAWA HISASHI;SAKURAI YOSHIHIKO;FUKUHARA TAKAHISA
分类号 C30B25/14;C23C16/44;C23C16/455;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 主分类号 C30B25/14
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