发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To uniformly process semiconductor wafers and increase throughput by providing a T-shaped gas supply nozzle that includes a column having small gas spouting holes near a column flange and near a susceptor. SOLUTION: A very large vertical epitaxial growth system comprises a discoid susceptor 2 on which a plurality of wafer holders 2a is arranged in parallel to hold a semiconductor wafer 1. The growth system has a T-shaped nozzle 4 near the center 2c of the surface 2a of the susceptor 2, and the nozzle includes a column 4a for spouting process gas such as monosilane, and a flange 4b for controlling the direction 3a of the process gas 3. The semiconductor wafer 1 is heated through the susceptor by a work coil 5. The nozzle 4 has a plurality of small spouting holes 4f in a tip portion 4c of the column 4a, in a portion near the flange 4d and in a portion 4e near the susceptor.</p> |
申请公布号 |
JPH09153461(A) |
申请公布日期 |
1997.06.10 |
申请号 |
JP19950311835 |
申请日期 |
1995.11.30 |
申请人 |
HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD |
发明人 |
ARAKAWA HISASHI;SAKURAI YOSHIHIKO;FUKUHARA TAKAHISA |
分类号 |
C30B25/14;C23C16/44;C23C16/455;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|