发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor device in which high reliability is kept for a long term by disposing a double side semiconductor chip in an area for disposing a semiconductor chip and connecting the double side semiconductor chip electrically with inner leads thereby eliminating generation of rust. SOLUTION: A large number of inner leads 1 are arranged around a double side semiconductor chip. The inner leads 1 are provided continuously with outer leads 3 and tie bars are formed on the boundary thereof. The double side semiconductor chip 2 comprises two semiconductor chips 2a, 2b bonded directly, back to back, through an adhesive 5 and conventional pads are eliminated between them. Since the semiconductor chips 2a, 2b have identical coefficient of thermal expansion and smooth rear surface, they can be bonded rigidly using extremely small quantity of adhesive 5. Consequently, deterioration of adhesion or exfoliation does not take place in the semiconductor device even if it is subjected to thermal history of temperature rise and drop during use or inevitable intrusion of moisture into the package.
申请公布号 JPH09153589(A) 申请公布日期 1997.06.10
申请号 JP19950337739 申请日期 1995.11.30
申请人 MITSUI HIGH TEC INC 发明人 HANADA HIDESHI
分类号 H01L23/28;H01L23/50;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L25/065 主分类号 H01L23/28
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