发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is formed on the end portion of the collector layer by etching, using an aqueous KOH solution. A B-doped p-silicon layer is formed on the end face by epitaxial growth and is used as a base layer. Furthermore, an As-doped n-silicon layer is formed on the base layer and is used as an emitter layer. Electrodes are respectively connected to the collector, base, and emitter layers.
|
申请公布号 |
US5637909(A) |
申请公布日期 |
1997.06.10 |
申请号 |
US19960581939 |
申请日期 |
1996.01.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAJIMA, HIROOMI;KATSUMATA, YASUHIRO;IWAI, HIROSHI;IINUMA, TOSHIHIKO;INOU, KAZUMI;KITAGAWA, MITSUHIKO;MORIZUKA, KOUHEI;NAKAGAWA, AKIO;OMURA, ICHIRO |
分类号 |
H01L21/331;H01L27/12;H01L29/73;H01L29/786;(IPC1-7):H01L21/331;H01L21/76 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|