| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of semiconductor device which enables large- scale integration in vertical and horizontal directions, and a manufacturing method thereof. SOLUTION: Source and drain electrodes 18 connected with n<-> and n<+> source and drain regions 12, 16 of a metal insulator semiconductor field-effect transistor and having a function as a part of a bit line, and a gate electrode 11 connected with a first wiring 20 as a word line, are provided. The electrodes 11, 18 are embedded and insulated by a sidwall insulator film 15, silicon oxide films 2, 19 or a silicon nitride film 3. Since the word line and the bit line do not cross each other on the same plane, the step in the vertical direction may be reduced. |
