| 摘要 |
PROBLEM TO BE SOLVED: To embody a static type semiconductor memory device with which the destruction of memory cell information by the malfunction in rewriting at the time of a chip enable activating operation occurring in the time delay in rising of the high node level voltage of the memory cell may be prevented. SOLUTION: The high node level voltage of a dummy cell 11 having the same characteristics as the characteristics of the high resistance type flip-flop memory cell of a memory cell array 10 and the trimming voltage at the lower limit of the operating margin of the power supply voltage supplied to the memory cell at the time of production are compared in a comparator 6. If the high node level voltage is lower in the level in the result of such comparison, a non-active signal 108 is formed and the input signal from outside is shut off via a control action by a non-activation signal 108. As a result, the destruction of the memory cell information by the malfunction in rewriting at the time of the chip enable activating operation occurring in the time delay in rising of the high node level voltage of the memory cell is prevented. |
