| 摘要 |
A method for the growth of semiconducting nitrides, such as GaN, InN, AlN, and their alloys, in an ultra-high vacuum chamber, wherein low energy atomic nitrogen is generated by a plasma-excited radical atom source, the atom beam is introduced to the heated substrate within a short distance, other gaseous reactants and dopants, such as TMGa, TMIn, TMAj, DEZn, CP2Mg, SiH4, and similar organmetallic and hydride sources, are injected from a circular injector located between the substrate and the atom source, and therefore large area epitaxy with high growth rate is obtained.
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