| 摘要 |
PROBLEM TO BE SOLVED: To reduce a phenomenon which has an influence upon the reliability of a semiconductor device by making the open width of an opening part formed in a first insulating film wider than that formed in the second insulating film and making a conductive film formed in the inner wall of the opening part and a conductive film formed in the bottom part of the opening part continue in the boundary. SOLUTION: An element separating film 12 is formed in a semiconductor substrate 10, and a diffused layer 14 is formed in the region of an element. A layer insulating film 20 comprising an etching stopper film 16 and an insulating film 18 is formed in the semiconductor substrate 10, and therein a contact hole 22 which reaches the semiconductor substrate is perforated. A conductive film 24 which functions as a barrier metal is formed on the inner wall of the contact hole 22 and the layer insulating film 20, and a plug 26 is buried in the contact hole 22 in which it is formed. A wiring layer 28 connected to the plug 26 is formed on the layer insulating film 20. |
