| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce spacing between two channels and lower ON resistance while restraining OFF current, by forming an LD region doped at a low density between the two channels. SOLUTION: An LD region 11Lin which is doped with n-type ions at a low density is formed between two channel regions 11Na and 11Nb. Since only the LD region 11Lin exists between both channel regions, the transistor is smaller in size than a conventional transistor. That is, with the structure such that the relatively high resistance LD region 11Lin is interposed between the two channels, relatively large resistance is obtained even though the distance between the channels is small. Also, by reducing the spacing between the two channel regions, ON resistance is lowered. Thus, a leakage current during an OFF operation is sufficiently reduced and a satisfactory ON current is obtained. In addition, diminution of the effective display region is restrained and the numerical aperture is improved.</p> |
