MANUFACTURE OF P-TYPE SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a P-type semiconductor crystal of II-VI compound semiconductor mainly formed of Zn and Se and almost free from impurities through a MBE method by the use of a simple device where dopant conditions are high in degree of free dam. SOLUTION: A P-type semiconductor crystal of II-VI compound semiconductor mainly formed of Zn and Se through a MBE method. At this point, and an irradiation target 4 formed of semiconductor and heated up to a temperature at which a semiconductor crystal can be crystallized is irradiated with a molecular beam composed of the component elements of II-VI compound semiconductor and also with a nitrogen molecular gas beam of pressure 3×10<-5> Torr or above at an electron ground state so as to form a P-type semiconductor crystal on it.