| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a photovoltaic infrared ray- receiving device, which has a desired device structure with satisfactory reproducibility even on the photovoltaic infrared ray-receiving device having satisfactory characteristics because of impurity doping with I-group elements and on GaAs and Si substrates. SOLUTION: The n-type region 2 of 1×10<18> cm<-3> is formed by means of implanting ions of B into a part of a p-type MCT layer 1 doped to 2×10<16> cm<-3> with Ag. The surface of the p-type MCT layer is covered with a CdTe protection film 3. A content hole for forming an electrode is formed in a part of the CdTe protection film 3. A p-side electrode 4 is formed on the p-type MCT layer 1 and the n-side electrode 5 on the n-type area 2.
|
