| 摘要 |
A method for limiting contaminant particle deposition upon integrated circuit layers within plasma assisted process reactor chambers. First, a plasma assisted process is undertaken upon an integrated circuit layer within a plasma assisted process reactor chamber. The plasma assisted process employs a first reactant gas composition, a first radio frequency power and a first reactor chamber pressure appropriate to the plasma assisted process and the integrated circuit layer. Immediately following the plasma assisted process is undertaken a first plasma purge step. The first plasma purge step employs a first concentration of an oxidizing reactant gas, a first concentration of a non-oxidizing reactant gas, a second radio frequency power and a second reactor chamber pressure. The second radio frequency power is lower than the first radio frequency power and the second reactor chamber pressure is higher than the first reactor chamber pressure. Finally, there is undertaken immediately following the first plasma purge step a second plasma purge step. The second plasma purge step employs a second concentration of the oxidizing reactant gas, a second concentration of the non-oxidizing reactant gas, a third radio frequency power and a third reactor chamber pressure. The third radio frequency power is less than the second radio frequency power, and the third reactor chamber pressure is lower than the second reactor chamber pressure.
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