| 发明名称 |
Method for fabricating a thin film semiconductor device |
| 摘要 |
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600 DEG C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
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| 申请公布号 |
US5637512(A) |
申请公布日期 |
1997.06.10 |
| 申请号 |
US19950434338 |
申请日期 |
1995.05.02 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MIYASAKA, MITSUTOSHI;LITTLE, THOMAS W. |
| 分类号 |
H01L21/30;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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