发明名称 |
METHOD FOR MANUFACTURING MOSET |
摘要 |
forming an active region and an isolation region on an N-type semiconductor substrate and forming a gate insulating film on the active region; depositing a polysilicon on the gate insulating film and performing the thermal annealing in the atmosphere of NH3; forming a gate wire by patterning the polysilicon; and ion-implanting of a P-type impurity into the whole front of the substrate.
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申请公布号 |
KR970009276(B1) |
申请公布日期 |
1997.06.09 |
申请号 |
KR19930022628 |
申请日期 |
1993.10.28 |
申请人 |
LG SEMICONDUCTOR CO.,LTD |
发明人 |
HWANG, HYUN-SANG |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/321;H01L21/336;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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