PLASMA PROCESSING METHOD AND DEVICE

摘要

PROBLEM TO BE SOLVED: To perform the carriage of a sample after processing by confirming the breakaway between sample stage and a sample during execution of cancel of electrostatic attraction, by measuring the potential difference between the sample stage and the sample. SOLUTION: Plasma 615 of high in density is produced in a vacuum container 67, and an electrostatic attracting power source 616 outputs DC voltage to make a sample stage 68 attract a wafer 85. That DC voltage attracts the sample 85 with the sample stage 68, being charged between the sample stage 68 and the wafer 85. The breakaway between the sample stage 68 and the wafer 85 can be confirmed during execution of cancel of electrostatic attraction of the wafer 85 being electrostatically attracted, by measuring the potential difference between the sample stage 68 and the wafer 86, using a DC voltmeter 86. Hereby, the carriage of the wafer 85 after processing can be performed quickly and safely.