| 摘要 |
PROBLEM TO BE SOLVED: To avoid causing troubles such as poor positioning of bumps being formed in transfer or plating steps, dispersion of bump heights, growth of voids or solder balls, peel of bumps and ununiformity of plated bumps with resist masks. SOLUTION: A semiconductor device has bumps 3 formed by transferring original bumps 11 formed on a bump base board 1 to metallized layers 21 for electrodes on a substrate 2. In position, the bumps 11 are made to have a diameter and pitch smaller than the gap between the adjacent layers 21 and pitch thereof, respectively. |
