发明名称 LASER A SEMICONDUCTEURS
摘要 <p>The laser includes an active layer (1) sandwiched between two confinement layers (2,3) to form a p-n junction. Holes are arranged on either side of the cavity (G) in at least one layer so as to form photonic band gap structures along its sidewalls (g1,g2) and across its ends (M1,M2). A two-dimensional material is sufficient since the optical mode is confined in the direction of the thickness of the laser by the multilayer structure formed during its growth.</p>
申请公布号 FR2734097(B1) 申请公布日期 1997.06.06
申请号 FR19950005660 申请日期 1995.05.12
申请人 THOMSON CSF 发明人 HOUDRE ROMUALD;WEISBUCH CLAUDE;BERGER VINCENT
分类号 G02B6/122;H01S5/10;H01S5/125;H01S5/40;(IPC1-7):H01S3/19 主分类号 G02B6/122
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