| 摘要 |
PROBLEM TO BE SOLVED: To realize efficient micromachining as fine as 10nm by a method in which the substrate temperature is set at a condensation point of etching gas or reaction products between the gas and the substrate, and the resulting condensate partially formed on the substrate is used as a mask for dry etching. SOLUTION: A 75-nm-thick PMMA film having a weight average molecular weight of 600,000 and a dispersive power of 3 is formed on an Si substrate 1 by spin coating. This film is scratched by a tungsten needle of 50 microns in point size under a pressure of 50 grams, and soaked in acetone for two minutes to form a condensation nucleus in a desired pattern. The substrate 1 is then subjected to ECR etching for one minute in a SF6 atmosphere at 1×10<-4> Torr at the condensation starting temperature of -130 degrees C. As a result, micromachining as fine as 10nm can be efficiently performed without using lithographic techniques. |
