| 摘要 |
PROBLEM TO BE SOLVED: To improve light emission output of a light emitting element, by forming an active layer of multiple quantum well structure wherein well layers composed of nitride semiconductor containing In and barrier layers composed of nitride semiconductor containg In are laminated. SOLUTION: A buffer layer 2, an N-type contact layer 3, a first N-type layer 4 acting as a buffer layer, a second N-type layer 5 acting as a light confining layer, and a third N-type layer 6 acting as a guide layer are formed on a sapphire substrate 1. An active layer 7 composed of multiple quantum well structure is formed by alternately laminating a plurality of well layers composed of undoped InGaN and a plurality of barrier layers composed of undoped InGaN. A first P-type layer 8 acting as a cap layer, a second P-type layer 9 acting as a light guide layer, and a third P-type layer 10 acting as a light confining layer are formed. A P-type contact layer 11 is formed, selective etching is performed, the surface of the N-type contact layer is exposed, and a positive electrode and a negative electrode are formed. |
