| 摘要 |
PROBLEM TO BE SOLVED: To form thin film polycrystal silicon of a desired film thickness without existence of small crystal on the film face side after solid-state growth by a method wherein, after a start film composed of amorphous silicon is formed on a substrate, a step of heating, crystallizing and forming a polycrystal silicon film is repeated. SOLUTION: An a-Si film doped with phosphorus constituting a nuclear generation layer is formed on a substrate 1 by a plasma CVD method. Continuously, the non-doped a-Si film of a film thickness 3μm or less being a crystal growing layer is formed on the phosphorus doped a-Si film by the plasma CVD method. Then, heat annealing is performed and solid-state growing is performed. Thereafter, a step of forming the non-doped a-Si film being a crystal growing layer and a step of performing heat annealing to make solid-state growth are repeated, and a poly Si 2a of a film thickness required for a device is formed on the substrate 1. The thus-formed thin film poly Si becomes a crystal structure connected from the substrate 1 to a face of the poly Si 2a in a longitudinal direction. |
