| 摘要 |
PROBLEM TO BE SOLVED: To eliminate offset errors of rotational components of a reticle pattern while improving throughput. SOLUTION: A shot area on a wafer is exposed to a first reticle pattern ...(S101). LSA marks are formed in the center of individual shot areas that are symmetrical with respect to the center of the wafer ...(S103). The wafer is subjected to prealignment, rotational correction, and measurement of positions of LSA marks ψ(S105-S109). Error parameters are determined from design values and measured values by a least-squares method ...(S111). A new chip arrangement map is prepared ...(S113), based on which the second and following reticle patterns are exposed ...(S115-117). |
