| 摘要 |
PROBLEM TO BE SOLVED: To detect such becoming weakness as soldering crack generating in an early stage by being provided with a thermal resistance detecting means by which thermal resistance increasing in a thermal radiating passage which radiates heat generation under a condition of using a semiconductor element is detected. SOLUTION: A high power semiconductor device is provided with an insulating board 12 for mounting high power semiconductor element with a high electrical conductivity existing between a high power semiconductor element (chip) 11 and a heat radiating board 13. The high power semiconductor element 11 and the insulating board 12 is fixed by a first soldering layer, and the insulating board 12 and the heat radiating board 13 is fixed by a second soldering layer 14. Additionally for example one or plural temperature detecting element(s) 21 having temperature dependency at the peripheral part at least on the insulating board 12 are arranged. By the means a thermal resistance is detected based upon an detecting output of the detecting element because it becomes higher than a setting value. In case of cracks being generated at the peripheral part of the second soldering layer 14, thermal resistance increasing in a heat radiating passage can be detected because heat radiating effect reduces and temperature increases. |
