| 摘要 |
PROBLEM TO BE SOLVED: To prevent the adhesion of the org. matter generated from a resist to a light transparent plate. SOLUTION: This device is provided with a stage 11 for placing a semiconductor substrate 14 formed with a photoresist 13, a lamp chamber 1 arranged with a photoirradiation port toward this photoresist 13, a mercury valve 3 built in this lamp chamber 1, a reflection mirror 2 for directing the UV light from this mercury valve 3 to the photoirradiation port and the translucent plate 4 existing in the photoirradiation port. The photoresist 13 is irradiated with the UV light from the mercury valve 3 via the translucent plate 4 and is cured. At this time, gaseous nitrogen heated to >=70 deg.C is supplied into a flow passage 5 disposed in the translucent plate 4 and the translucent plate 4 is heated by this gaseous nitrogen, by which the adhesion of the org. gases generated from the resist to the translucent plate 4 is prevented. |
