| 摘要 |
PROBLEM TO BE SOLVED: To get an electronic device capable of operation with ultralow current consumption practically without letting a current flow, by giving a potential difference between the first conductive regions, and raising one Fermi level, and shifting electrons from one first conductive region to the other conductive region through the second conductive region. SOLUTION: This electronic device has two first conductive regions which can confine carriers and the second conductive region higher in energy level than the first conductive region. Voltage is applied to the first conductive region, and carriers are shifted via the second conductive region by tunnel effect, from one side to the other side of the first conductive region. At this time, even if the bias between the first conductive regions is cut, the electrons are kept shut in one first conductive region because the level of quantum in the second conductive region is high, so a potential difference occurs between the electrodes of the first conductive region, thus a nonvolatile memory can be constituted. Since it will do to merely shift the electron in the first conductive region this way, a memory operation low in power consumption can be materialized. |
